Category: Power Solutions

SEOUL, South Korea, July 10, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has released four new MXT LV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)^*, using Super-Short Channel technology, to further expand Magnachip’s seventh-generation MXT LV MOSFET line-up for battery protection circuits of mobile devices.

 

 

Super-Short Channel is Magnachip’s latest design technology to reduce R_on (the resistance of MOSFETs during on-state operation) by shortening the channel length between the source and the drain. The R_on of these new MOSFETs has been reduced by 24~40%, compared to previous generations, and as a result, the battery performance is improved with low power losses when a battery is charging or discharging.

In addition, Magnachip provides customized design service for these products, based on the application specifications and battery capacities, so the sizes of the MOSFETs can be reduced by 5 to 20% respectively.

With these technical capabilities, flexible design and compact size options, the extended MXT LV MOSFET line-up satisfies the various technical requirements of a wide range of mobile devices, from premium foldable phones to wireless earphones.

“Magnachip has released five new MXT LV MOSFETs for battery protection circuits so far this year,” said YJ Kim, CEO of Magnachip.  “We will continue to create premium MOSFETs that offer great power efficiency and outstanding performance for mobile devices to solidify our presence in the market.”

 

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^* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs

 

Product features

• 7^th–generation silicon trench technology
• Reduced R_on by approximately 24%~40% compared to the previous generations
• Enhanced switching speed through low total gate charge
• Outstanding thermal properties
• Solutions for a wide range of mobile devices

– The 40V MXT MOSFET with R_DS(on) as low as 1.4mΩ enables effective kinetic energy recovery in cars

 

 SEOUL, South Korea, June 12, 2023 – Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has begun mass production of its new 40V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)1 for automotive energy recovery systems. This product is used in the automobile of a global automaker.

 

 

An automotive energy recovery system stores a vehicle’s kinetic energy while braking and uses the recovered energy for functions such as air conditioning or audio systems afterwards. Therefore, this feature improves fuel economy and reduces emissions.

Built on a Power Dual Flat No-lead (PDFN) 56 package with enhanced design of the core cells and terminations, the 40V MXT MOSFET (AMDU040N014VRH) offers R_DS(on)2 as low as 1.4mΩ to enhance the efficiency of kinetic energy recovery. In addition, a guaranteed operating junction temperature up to 175°C and a high level of avalanche ruggedness increase the power density and efficiency of the energy recovery system.

With the application of the PDFN56 package, the size of this new MOSFET was reduced by approximately 80%, as compared to other 40V MOSFET products designed with a Decawatt Package (DPAK). As a PDFN56 package is widely used in the automotive sector, the new product is well-suited for various applications such as reverse voltage protection circuits and brushless direct current motors of internal combustion engines and regenerative braking systems of electric vehicles.

“We are pleased to deliver another innovative automotive power solution, which is fully AEC – Q101 qualified for its performance and stability,” said YJ Kim, CEO of Magnachip. “Leveraging our heritage of innovative technology, Magnachip will continue to develop premium products that satisfy the diverse and changing market requirements of the automotive market.”

 

 

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¹ MXT MOSFET (Magnachip eXtreme Trench MOSFET): Magnachip’s cutting-edge product portfolio of trench MOSFETs, including low and medium voltage (12V to 200V) MOSFETs

² R_DS(on): On resistance, the resistance value between the drain and the source of MOSFETs during on-state operation

 

– Magnachip introduces new 600V SJ MOSFET with R_DS(on)* as low as 44mΩ for EV chargers and servers

SEOUL, South Korea, May 2, 2023 /PRNewswire/ — Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology.

 

 

Magnachip’s proprietary design provides specific on-resistance (R_SP) reduction of about 10%, and this result was achieved while maintaining the same cell-pitches of previous generation MOSFETs.

In addition, the new product family of 600V SJ MOSFETs is equipped with a fast recovery body diode. This diode technology significantly enhances system efficiency with reduced reverse recovery time (t_rr) and switching loss. Therefore, the figure of merit to evaluate general performance of MOSFETs was improved by more than 10% compared to the previous generation. As such, these 600V SJ MOSFETs can be used widely in industrial applications, such as solar inverters, energy storage systems, uninterruptible power supply systems, and a variety of electronics.

Among these new MOSFETs, the MMQ60R044RFTH product offers an exceptionally low R_DS(on) of 44mΩ, making it an optimal choice for electric vehicle chargers and servers. Omdia, a global market research firm, estimates that the compound annual growth rates of Si MOSFET markets for hybrid & electric vehicles and servers will be 11% and 7%, respectively, from 2023 to 2026.

“Now that we have introduced these 600V SJ MOSFET products, we are aiming to unveil new 650V and 700V SJ MOSFET products with fast recovery body diode in the second half of 2023,” said YJ Kim, CEO of Magnachip. “These new MOSFETs represent a notable achievement for the Company, and we will build upon this success to deliver next-generation power solutions for rapidly changing market requirements and customer expectations.”

 

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* R_DS(on): On resistance, the resistance between the drain and the source of MOSFETs during on-state operation.

 

New Family of 600V SJ MOSFET Products

 

Related Link

Power Solutions > SJ MOSFETs > 600V

 

 

In the Media

     Magnachip Debuts New Family of 600V SJ MOSFET Products Featuring Fast Recovery Body Diodes

SEOUL, South Korea, March 2, 2023 – Magnachip Semiconductor Corporation (“Magnachip”) (NYSE: MX) announced today that the company has released two seventh-generation MXT Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)¹, built on its Super-Short Channel technology, for the battery protection circuit modules in smartphones.

 

 

Super-Short Channel is Magnachip’s latest design technology to shorten the channel length between the source and the drain to significantly reduce R_DS(on)² and conduction losses during on-state operation. Magnachip is applying this technology first to the newly-released 12V MOSFET (MDWC12D028ERH) and 24V MOSFET (MDWC24D031ERH).

Thanks to Super-Short Channel technology, the sizes of these new MOSFETs have been reduced by 20%, while the R_DS(on) of MDWC12D028ERH and MDWC24D031ERH is lowered by 40% and 24%, respectively, compared to the previous versions. With these enhanced product features, power loss is reduced when a battery is charging or discharging and a low operating temperature can be maintained for fast battery charging.

Magnachip plans to release compact-sized Super-Short Channel MXT MOSFETs with great power efficiency for the small batteries of wearable devices, such as smart watches and earphones, in the second half of 2023.

“The new Super-Short Channel technology has taken the performance of MXT MOSFETs to the next level.” said YJ Kim, CEO of Magnachip. “Magnachip will continue our efforts to advance technological innovation and deliver premium power management solutions satisfying the diverse and changing requirements of mobile device manufacturers.”

 

 

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¹ MXT MOSFET (Magnachip eXtreme Trench MOSFET): Magnachip’s cutting-edge product portfolio of trench MOSFETs, including low and medium voltage (12V to 200V) MOSFETs

² R_DS(on): On resistance, the resistance value between the drain and the source of MOSFETs during on-state operation

 

 

 

In the Media

  Magnachip Unveils Super-Short Channel MXT MOSFETs for Smartphone Battery Protection Circuit Modules

– Magnachip’s eighth-generation 150V MXT MOSFET features lower R_DS(on) and a TOLL package to enable motor controllers and battery management systems to be managed efficiently

 

SEOUL, South Korea, December 29, 2022 – Magnachip Semiconductor Corporation (“Magnachip”) (NYSE: MX) announced today that the company has launched its eighth-generation 150V MXT Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)¹ optimized for Light Electric Vehicle (LEV) motor controllers and battery management systems (BMSs).

Energy efficiency plays a critical role in electric devices when it comes to power consumption and product stability. This newly-released MOSFET (MDT15N054PTRH) features Magnachip’s eighth-generation trench MOSFET technology to lower R_DS(on)² by 28%, as compared to the previous generation. Based on the enhanced design of the core cell and termination, a high figure of merit can be achieved and an increase in the total gate charge³ can be avoided.

MDT15N054PTRH is available in a surface mount device TO-Leadless (TOLL) package to reduce product size and improve heat dissipation. The energy efficiency is also significantly enhanced by fast switching, while enabling high power density. In addition, a guaranteed operating junction temperature from -55°C up to 175°C and a high level of avalanche ruggedness help the new MXT MOSFET to exceed the performance requirements of LEV motor controllers and BMSs.

“Beginning in 2008 we have released more than 40 MOSFET products for motor controllers and battery management systems and, since 2017, most of them have been made for LEV applications,” said YJ Kim, CEO of Magnachip. “As a provider of high-performance MOSFETs, Magnachip will continue to deliver innovative solutions that meet the sophisticated requirements of the market.”

 

Product features

• low R_DS(on) and switching loss
• great heat dissipation performance
• guaranteed operating junction temperature from -55°C up to 175°C
• a wide range of applications, such as LEV motor controllers and BMSs and switch mode power supplies for various consumer electronics

 

 

 

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¹ MXT MOSFET (Magnachip eXtreme Trench MOSFET): Magnachip’s cutting-edge product portfolio of trench MOSFETs, including low and medium voltage MOSFETs

² R_DS(on): On resistance, the resistance value between the drain and the source of MOSFETs during on-state operation

³ Total gate charge (Q_g): the amount of charge required to be injected into the gate electrode to turn ON (drive) the MOSFET

 

 

 

In the Media

   Magnachip Introduces 8th-Gen 150V MXT MOSFET for Light Electric Vehicles

   Magnachip Introduces 8th-Gen 150V MXT MOSFET for Light Electric Vehicles

– 3 new 200V MV MOSFETs will help the company grow its global market share in the LEV motor controller and industrial power supply sectors

 

SEOUL, South Korea, September 6, 2022 – Magnachip Semiconductor Corporation (“Magnachip”) (NYSE: MX) announced today that the company has introduced its third- generation 200V Medium Voltage (MV) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) for Light Electric Vehicles (LEV) motor controllers and industrial power supplies.

 

To maximize energy efficiency in power devices, Magnachip’s new 200V MOSFETs incorporate third-generation trench MOSFET technology. The capacitance was reduced by 50% compared to the previous generation 100V MV MOSFET and the enhanced design of the core cell and termination helps lower R_DS(on)^* and total gate charge^** to achieve a high figure of merit.

In addition, these third-generation MOSFETs are available in surface mount device TO-Leadless Package (TOLL), M2PAK and TO-220 of a through-hole type respectively to reduce product size and enhance heat dissipation. Furthermore, the energy efficiency of these MOSFETs is greatly increased by fast switching and high power density. Coupled with a guaranteed operating junction temperature from -55°C up to 175°C and a high level of avalanche ruggedness, these MOSFETs are well-suited for LEV motor controllers and industrial power supplies requiring high efficiency and stable power supply.

Omdia, a global market research firm, estimates that the annual growth rates of the automotive and industrial sectors of the global silicon power MOSFET market will be 11.5% and 9.6% respectively from 2020 to 2025. In particular, LEV markets are expanding quickly alongside efforts to accelerate decarbonisation and demand for efficient and affordable vehicles.

“The development of advanced applications in the automotive and industrial sectors is driving the need for high-performance MV MOSFETs,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to upgrade its MV MOSFET product line, ranging from 40V to 200V, which will enable our customers to strengthen their product competitiveness.”

 

 

^*R_DS(on): On resistance, the resistance value between the drain and the source of MOSFETs during on-state operation

^**Total gate charge (Q_g): the amount of charge required to be injected into the gate electrode to turn ON (drive) the MOSFET

 

Product features

• low R_DS(on) and switching loss
• great heat dissipation performance
• guaranteed operating junction temperature from -55°C up to 175°C
• a wide range of application, such as LEVs, battery management systems and switch mode power supplies

 

 

 

In the Media

     Magnachip Unveils Third-Generation 200V MV MOSFETs

     Magnachip Unveils Third-Generation 200V MV MOSFETs

                                            

– Company intends to grow its market share in the global solar energy market with the release of this new IGBT

 

SEOUL, South Korea, June 17, 2022 – Magnachip Semiconductor Corporation (“Magnachip”) (NYSE: MX) announced today that the company has unveiled a new 650V insulated-gate bipolar transistor (IGBT) for solar inverters.

 

 

As environmental impacts from climate change are becoming more severe, the use of renewable energy like solar power continues to expand globally to reduce carbon emissions. Omdia, a global market research firm, estimates that the global market for IGBTs in the renewable energy sector will grow 15% annually from 2022 to 2025. In March 2022, Magnachip developed a new 650V IGBT built with advanced “field stop trench technology” for fast switching speed and high breakdown voltages and the company will begin mass production of it this month.

The current density of this new 650V IGBT was improved by 30% compared to the prior generation by adopting the latest technology. This IGBT is also designed to provide a minimum short-circuit withstand time of 5µs and it is optimized for parallel switching because of its positive temperature coefficient. The parallel switching of this IGBT will increase the load current and thus the maximum output power.

In addition, the 650V IGBT features anti-parallel diodes for fast switching and low switching loss, while guaranteeing a maximum operating junction temperature of 175°C. Based on standards issued by the Joint Electron Device Engineering Council (JEDEC), this new IGBT can be widely used for applications requiring strict power level and high efficiency, such as solar boost inverters and converters, uninterruptible power supplies and universal power inverters.

“Magnachip’s first IGBT was introduced in 2013, and since then, we have been committed to developing high-efficiency products for a variety of markets, while strengthening our presence around the world,” said YJ Kim, CEO of Magnachip. “With this new product, we are expanding our efforts to deliver high-performance products for the eco-friendly renewable energy market.”

 

Magnachip’s IGBT products for the solar energy market

Model	VCES [V]	IC [A] TC=100℃	Package
MBQ75T65P	650V	75A	TO-247
MBQ40T120Q	1200V	40A	TO-247

 

 

 

In the Media

    Magnachip Unveils a New 650V IGBT for Solar Inverters

    Magnachip Unveils a New 650V IGBT for Solar Inverters