– 900V Breakdown Voltage, Low Total Gate Charge well-suited for Industrial and Lighting Applications –
SEOUL, South Korea and SAN JOSE, Calif., Oct. 15, 2018 /PRNewswire/ — MagnaChip Semiconductor Corporation (“MagnaChip”) (NYSE: MX), a designer and manufacturer of analog and mixed-signal semiconductor platform solutions, today announced the introduction of a new High-Voltage Super Junction MOSFET with a 900V breakdown voltage and low total gate charge (Qg) (“”90R1K4P”). The device with two package types, I-PAK and D-PAK, will sample to customers in November 2018 and will be manufactured in high volume in early first quarter of next year.
90R1K4P features the maximum peak voltage of 950V and a breakdown voltage as high as 900V, which enables enhanced system stability and reliability. It is well-suited for high-voltage applications such as:
● an auxiliary power supply for industrial smart metering, which uses a three-phase input power to alternate current electric power generation,
transmission, and distribution.
● the lighting of flyback topology in both AC/DC and DC/DC high-speed switching converters.
● a power supply for lighting equipment due to its characteristics of high stability that help prevent an unstable system condition that could lead
to outages.
90R1K4P increases its switching speed due to its low total gate charge (Qg), which reduces heat generation in the system, keeps power loss down and improves energy efficiency. It also enables smaller form factors than the High-Voltage Planar MOSFET, since the die size of 90R1K4P is more than 50% smaller under the same condition of conduction loss.
To enable the use of 90R1K4P product in small form factors, MagnaChip will house the device in a small I-PAK package type under the code MMIS90R1K4P. As a result of the die size reduction and choice of packaging, this new MOSFET has the potential to be adopted in a wide range of applications.
Moreover, to ensure 90R1K4P product can be adopted for applications where space is at a premium, the company also can mount the Super Junction MOSFET into the slim SMD (Surface-Mount Devices) package type, D-PAK. It will be available under the code MMD90R1K4P.
“MagnaChip’s High-Voltage Super Junction MOSFET with a high breakdown voltage and a low total gate charge (Qg) will provide customers with high system reliability and energy efficiency,” said YJ Kim, CEO of MagnaChip. “We will continue to develop products based on the newly launched High-Voltage Super Junction MOSFET and extend our product portfolio with a diverse line of Super Junction MOSFETs with improved performance.”
About MagnaChip Semiconductor
MagnaChip is a designer and manufacturer of analog and mixed-signal semiconductor platform solutions for communications, IoT, consumer, industrial and automotive applications. The Company’s Standard Products Group and Foundry Services Group provide a broad range of standard products and manufacturing services to customers worldwide. MagnaChip, with over 30 years of operating history, owns a portfolio of approximately 3,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through, MagnaChip’s website is not a part of, and is not incorporated into, this release.
CONTACTS:
United States (Investor Relations):
Bruce Entin
Entin Consulting
Tel. +1-408-625-1262
Investor.relations@magnachip.com
USA media / industry analysts:
Mike Newsom
LouVan Communications, Inc.
Tel. +1-617-396-8957
mike@louvanpr.com
Korea / Asia media:
Chankeun Park
Director of Public Relations
Tel. +82-2-6903-5223
chankeun.park@magnachip.com
